MTP23P06V Specs and Replacement
Type Designator: MTP23P06V
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 98.3 nS
Cossⓘ -
Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-220AB
- MOSFET ⓘ Cross-Reference Search
MTP23P06V datasheet
..1. Size:169K motorola
mtp23p06v.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP23P06V/D Designer's Data Sheet MTP23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 23 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS ... See More ⇒
..2. Size:78K onsemi
mtp23p06v mtp23p06v mtp23p06vg.pdf
MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 23 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)... See More ⇒
0.1. Size:192K motorola
mtp23p06vrev1e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP23P06V/D Designer's Data Sheet MTP23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 23 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS ... See More ⇒
9.1. Size:290K cystek
mtp2311m3.pdf
Spec. No. C733M3 Issued Date 2013.09.18 CYStech Electronics Corp. Revised Date Page No. 1/9 60V P-Channel Enhancement Mode MOSFET BVDSS -60V ID -4A MTP2311M3 RDSON@VGS=-10V, ID=-4A 72m (typ.) RDSON@VGS=-4.5V, ID=-3A 98m (typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol Outlin... See More ⇒
9.2. Size:324K cystek
mtp2311v8.pdf
Spec. No. C733V8 Issued Date 2013.06.24 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60V MTP2311V8 ID -11A RDSON@VGS=10V, ID=-3A 63m (typ) RDSON@VGS=-4.5V, ID=-2A 78m (typ) Description The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized... See More ⇒
9.3. Size:607K cystek
mtp2301n3.pdf
Spec. No. C322N3 CYStech Electronics Corp. Issued Date 2004.04.05 Revised Date 2018.08.31 Page No. 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25 C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res... See More ⇒
9.4. Size:307K cystek
mtp2311n3.pdf
Spec. No. C733N3 Issued Date 2011.12.27 CYStech Electronics Corp. Revised Date Page No. 1/8 -60V P-CHANNEL Enhancement Mode MOSFET BVDSS -60V MTP2311N3 ID -3.5A RDSON@VGS=-10V, ID=-2A 72m (typ) RDSON@VGS=-4.5V,ID=-1.7A 98m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell... See More ⇒
9.5. Size:316K cystek
mtp2317n3.pdf
Spec. No. C566N3 CYStech Electronics Corp. Issued Date 2012.04.12 Revised Date 2014.01.14 Page No. 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP2317N3 ID -5.8A 28m (typ.) RDSON@VGS=-4.5V, ID=-4.5A 35m (typ.) RDSON@VGS=-2.5V, ID=-2.5A 51m (typ.) RDSON@VGS=-1.8V, ID=-2A Features Advanced trench process technology High density cell design f... See More ⇒
9.6. Size:302K cystek
mtp2301s3.pdf
Spec. No. C322S3 CYStech Electronics Corp. Issued Date 2013.08.29 Revised Date 2013.09.09 Page No. 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301S3 ID -1.6A 75m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m (typ.) RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance ... See More ⇒
9.7. Size:710K cystek
mtp2305n3.pdf
Spec. No. C417N3 Issued Date 2007.07.27 CYStech Electronics Corp. Revised Date 2018.12.06 Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25 C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features ... See More ⇒
9.8. Size:702K cystek
mtp2303n3.pdf
Spec. No. C426N3 Issued Date 2008.03.24 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS ... See More ⇒
9.9. Size:514K jiejie micro
jmtp230c04d.pdf
JMTP230C04D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 40V, 8A Battery Protection R ... See More ⇒
9.10. Size:869K cn vbsemi
mtp2301n3.pdf
MTP2301N3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒
Detailed specifications: MTP1N60, MTP1N60E, MTP1N80E, MTP1N95, MTP20N10E, MTP20N15EG, MTP20N20E, MTP20P06, IRF520, MTP23P06VG, MTP25N05E, MTP2955, MTP2955V, MTP2N18, MTP2N20, MTP2N35, MTP2N40
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