MTP2955V Todos los transistores

 

MTP2955V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP2955V
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET MTP2955V

 

Principales características: MTP2955V

 ..1. Size:121K  motorola
 mtp2955v.pdf pdf_icon

MTP2955V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955V/D Designer's Data Sheet MTP2955V TMOS V Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than do

 ..2. Size:205K  onsemi
 mtp2955v.pdf pdf_icon

MTP2955V

MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 12 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)

 0.1. Size:116K  motorola
 mtp2955vrev3.pdf pdf_icon

MTP2955V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955V/D Designer's Data Sheet MTP2955V TMOS V Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than do

 7.1. Size:179K  motorola
 mtp2955e.pdf pdf_icon

MTP2955V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet MTP2955E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS efficie

MOSTRAR MÁS

Otros transistores... MTP20N10E , MTP20N15EG , MTP20N20E , MTP20P06 , MTP23P06V , MTP23P06VG , MTP25N05E , MTP2955 , 2N60 , MTP2N18 , MTP2N20 , MTP2N35 , MTP2N40 , MTP2N40E , MTP2N45 , MTP2N50E , MTP2N55 .

History: MDU2657 | IPA60R180P7S | PT9435 | ZVN3310FTA | PSMN6R4-30MLD | ZVNL110ASTOB | MTP4N90

 

 
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