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MTP2955V Specs and Replacement

Type Designator: MTP2955V

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO-220AB

MTP2955V substitution

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MTP2955V datasheet

 ..1. Size:121K  motorola
 mtp2955v.pdf pdf_icon

MTP2955V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955V/D Designer's Data Sheet MTP2955V TMOS V Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than do... See More ⇒

 ..2. Size:205K  onsemi
 mtp2955v.pdf pdf_icon

MTP2955V

MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 12 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on) ... See More ⇒

 0.1. Size:116K  motorola
 mtp2955vrev3.pdf pdf_icon

MTP2955V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955V/D Designer's Data Sheet MTP2955V TMOS V Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than do... See More ⇒

 7.1. Size:179K  motorola
 mtp2955e.pdf pdf_icon

MTP2955V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet MTP2955E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS efficie... See More ⇒

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Detailed specifications: MTP20N10E, MTP20N15EG, MTP20N20E, MTP20P06, MTP23P06V, MTP23P06VG, MTP25N05E, MTP2955, 2N60, MTP2N18, MTP2N20, MTP2N35, MTP2N40, MTP2N40E, MTP2N45, MTP2N50E, MTP2N55

Keywords - MTP2955V MOSFET specs

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