MTP2955V MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP2955V
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO-220AB
MTP2955V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP2955V Datasheet (PDF)
mtp2955v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955V/DDesigner's Data SheetMTP2955VTMOS VPower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than do
mtp2955v.pdf
MTP2955VPreferred DevicePower MOSFET12 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power12 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)
mtp2955vrev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955V/DDesigner's Data SheetMTP2955VTMOS VPower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than do
mtp2955e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955E/DDesigner's Data SheetMTP2955ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSefficie
mtp2955erev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955E/DDesigner's Data SheetMTP2955ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSefficie
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf
mtp2955l3.pdf
Spec. No. : C733L3 Issued Date : 2012.02.14 CYStech Electronics Corp. Revised Date : 2014.07.25 Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP2955L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-2.4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) Features 70m (typ.) RDSON@VGS=-10V, ID=-0.75A Simple Drive Requirement RDSON@VGS=-4.5V, ID=-1.7A 99m
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: TSM4N80CI
History: TSM4N80CI
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