Справочник MOSFET. MTP2955V

 

MTP2955V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTP2955V
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTP2955V

 

 

MTP2955V Datasheet (PDF)

 ..1. Size:121K  motorola
 mtp2955v.pdf

MTP2955V MTP2955V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955V/DDesigner's Data SheetMTP2955VTMOS VPower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than do

 ..2. Size:205K  onsemi
 mtp2955v.pdf

MTP2955V MTP2955V

MTP2955VPreferred DevicePower MOSFET12 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power12 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)

 0.1. Size:116K  motorola
 mtp2955vrev3.pdf

MTP2955V MTP2955V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955V/DDesigner's Data SheetMTP2955VTMOS VPower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than do

 7.1. Size:179K  motorola
 mtp2955e.pdf

MTP2955V MTP2955V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955E/DDesigner's Data SheetMTP2955ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSefficie

 7.2. Size:207K  motorola
 mtp2955erev2.pdf

MTP2955V MTP2955V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955E/DDesigner's Data SheetMTP2955ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSefficie

 7.3. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

MTP2955V

 7.4. Size:560K  cystek
 mtp2955l3.pdf

MTP2955V MTP2955V

Spec. No. : C733L3 Issued Date : 2012.02.14 CYStech Electronics Corp. Revised Date : 2014.07.25 Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP2955L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-2.4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) Features 70m (typ.) RDSON@VGS=-10V, ID=-0.75A Simple Drive Requirement RDSON@VGS=-4.5V, ID=-1.7A 99m

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