MTP2955V
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP2955V
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 60
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 12
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 19
nC
trⓘ -
Время нарастания: 50
ns
Cossⓘ - Выходная емкость: 200
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23
Ohm
Тип корпуса:
TO-220AB
Аналог (замена) для MTP2955V
MTP2955V
Datasheet (PDF)
..1. Size:121K motorola
mtp2955v.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955V/DDesigner's Data SheetMTP2955VTMOS VPower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than do
..2. Size:205K onsemi
mtp2955v.pdf MTP2955VPreferred DevicePower MOSFET12 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power12 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)
0.1. Size:116K motorola
mtp2955vrev3.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955V/DDesigner's Data SheetMTP2955VTMOS VPower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than do
7.1. Size:179K motorola
mtp2955e.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955E/DDesigner's Data SheetMTP2955ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSefficie
7.2. Size:207K motorola
mtp2955erev2.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2955E/DDesigner's Data SheetMTP2955ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSefficie
7.4. Size:560K cystek
mtp2955l3.pdf Spec. No. : C733L3 Issued Date : 2012.02.14 CYStech Electronics Corp. Revised Date : 2014.07.25 Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP2955L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-2.4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) Features 70m (typ.) RDSON@VGS=-10V, ID=-0.75A Simple Drive Requirement RDSON@VGS=-4.5V, ID=-1.7A 99m
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