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MTP2P50EG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP2P50EG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: TO-220AB
 

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MTP2P50EG Datasheet (PDF)

 ..1. Size:184K  onsemi
 mtp2p50eg.pdf pdf_icon

MTP2P50EG

MTP2P50EPower MOSFET2 Amps, 500 VoltsP-Channel TO-220This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradingperformance over time. In addition, this Power MOSFET is designed http://onsemi.comto withstand high energy in the avalanche and commutation modes.The energy efficient design also offers a drain-to-sourc

 6.1. Size:198K  motorola
 mtp2p50e.pdf pdf_icon

MTP2P50EG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2P50E/DDesigner's Data SheetMTP2P50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 6.2. Size:230K  motorola
 mtp2p50erev1x.pdf pdf_icon

MTP2P50EG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2P50E/DDesigner's Data SheetMTP2P50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 6.3. Size:187K  onsemi
 mtp2p50e-d.pdf pdf_icon

MTP2P50EG

MTP2P50EPower MOSFET2 Amps, 500 VoltsP-Channel TO-220This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradingperformance over time. In addition, this Power MOSFET is designed http://onsemi.comto withstand high energy in the avalanche and commutation modes.The energy efficient design also offers a drain-to-sourc

MOSTRAR MÁS

Otros transistores... MTP2N55 , MTP2N60 , MTP2N60E , MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , IRF9640 , MTP3055V , MTP30P06V , MTP36N06V , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 .

History: CJAC110SN10 | HTN019N03P | DMN10H100SK3 | TSM6981DCA | HFP2N65U | HUFA76429S3ST | G50N03A

 

 
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