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MTP2P50EG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP2P50EG

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO-220AB

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MTP2P50EG datasheet

 ..1. Size:184K  onsemi
 mtp2p50eg.pdf pdf_icon

MTP2P50EG

MTP2P50E Power MOSFET 2 Amps, 500 Volts P-Channel TO-220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed http //onsemi.com to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-sourc

 6.1. Size:198K  motorola
 mtp2p50e.pdf pdf_icon

MTP2P50EG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2P50E/D Designer's Data Sheet MTP2P50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra

 6.2. Size:230K  motorola
 mtp2p50erev1x.pdf pdf_icon

MTP2P50EG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2P50E/D Designer's Data Sheet MTP2P50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra

 6.3. Size:187K  onsemi
 mtp2p50e-d.pdf pdf_icon

MTP2P50EG

MTP2P50E Power MOSFET 2 Amps, 500 Volts P-Channel TO-220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed http //onsemi.com to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-sourc

MOSTRAR MÁS

Otros transistores... MTP2N55 , MTP2N60 , MTP2N60E , MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , K2611 , MTP3055V , MTP30P06V , MTP36N06V , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 .

 

 

 

 

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