All MOSFET. MTP2P50EG Datasheet

 

MTP2P50EG Datasheet and Replacement


   Type Designator: MTP2P50EG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-220AB
 

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MTP2P50EG Datasheet (PDF)

 ..1. Size:184K  onsemi
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MTP2P50EG

MTP2P50EPower MOSFET2 Amps, 500 VoltsP-Channel TO-220This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradingperformance over time. In addition, this Power MOSFET is designed http://onsemi.comto withstand high energy in the avalanche and commutation modes.The energy efficient design also offers a drain-to-sourc

 6.1. Size:198K  motorola
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MTP2P50EG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2P50E/DDesigner's Data SheetMTP2P50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 6.2. Size:230K  motorola
mtp2p50erev1x.pdf pdf_icon

MTP2P50EG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2P50E/DDesigner's Data SheetMTP2P50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 6.3. Size:187K  onsemi
mtp2p50e-d.pdf pdf_icon

MTP2P50EG

MTP2P50EPower MOSFET2 Amps, 500 VoltsP-Channel TO-220This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradingperformance over time. In addition, this Power MOSFET is designed http://onsemi.comto withstand high energy in the avalanche and commutation modes.The energy efficient design also offers a drain-to-sourc

Datasheet: MTP2N55 , MTP2N60 , MTP2N60E , MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , IRF9640 , MTP3055V , MTP30P06V , MTP36N06V , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 .

History: SUD17N25-165 | IPD30N03S2L-20 | MTN3484J3 | PE614DX | APT39F60J | DMP3010LK3 | 7N65G-T2Q-T

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