MTP2P50EG MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTP2P50EG
   Marking Code: MTP2P50E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-220AB

MTP2P50EG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP2P50EG Datasheet (PDF)

..1. Size:184K onsemi
mtp2p50eg.pdf

MTP2P50EPower MOSFET2 Amps, 500 VoltsP-Channel TO-220This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradingperformance over time. In addition, this Power MOSFET is designed http://onsemi.comto withstand high energy in the avalanche and commutation modes.The energy efficient design also offers a drain-to-sourc

6.1. Size:198K motorola
mtp2p50e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2P50E/DDesigner's Data SheetMTP2P50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

6.2. Size:230K motorola
mtp2p50erev1x.pdf