MTP2P50EG Specs and Replacement
Type Designator: MTP2P50EG
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: TO-220AB
MTP2P50EG substitution
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MTP2P50EG datasheet
mtp2p50eg.pdf
MTP2P50E Power MOSFET 2 Amps, 500 Volts P-Channel TO-220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed http //onsemi.com to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-sourc... See More ⇒
mtp2p50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2P50E/D Designer's Data Sheet MTP2P50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒
mtp2p50erev1x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2P50E/D Designer's Data Sheet MTP2P50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒
mtp2p50e-d.pdf
MTP2P50E Power MOSFET 2 Amps, 500 Volts P-Channel TO-220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed http //onsemi.com to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-sourc... See More ⇒
Detailed specifications: MTP2N55, MTP2N60, MTP2N60E, MTP2N80, MTP2N85, MTP2N90, MTP2P45, MTP2P50, K2611, MTP3055V, MTP30P06V, MTP36N06V, MTP3N100, MTP3N120E, MTP3N35, MTP3N40, MTP3N55
Keywords - MTP2P50EG MOSFET specs
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History: IPI180N10N3 | MDS1754RH
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