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MTP36N06V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP36N06V

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 138 nS

Cossⓘ - Capacitancia de salida: 337 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO-220AB

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MTP36N06V datasheet

 ..1. Size:165K  motorola
mtp36n06v.pdf pdf_icon

MTP36N06V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n

 ..2. Size:188K  motorola
mtp36n06v .pdf pdf_icon

MTP36N06V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n

 ..3. Size:202K  onsemi
mtp36n06v.pdf pdf_icon

MTP36N06V

MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 32 AMPERES circuits where di

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History: NTZD3152P | LSB60R092GT | J330 | VST007N07MS | JMSL1040AUQ | STS8235 | FDS3992

 

 

 

 

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