MTP36N06V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP36N06V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 138 nS
Cossⓘ - Capacitancia de salida: 337 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de MTP36N06V MOSFET
- Selecciónⓘ de transistores por parámetros
MTP36N06V datasheet
mtp36n06v.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n
mtp36n06v .pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n
mtp36n06v.pdf
MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 32 AMPERES circuits where di
Otros transistores... MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , MTP2P50EG , MTP3055V , MTP30P06V , MMIS60R580P , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 , MTP3N75 , MTP3N80 , MTP3N95 .
History: NTZD3152P | LSB60R092GT | J330 | VST007N07MS | JMSL1040AUQ | STS8235 | FDS3992
History: NTZD3152P | LSB60R092GT | J330 | VST007N07MS | JMSL1040AUQ | STS8235 | FDS3992
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
go42n10 | 2sa970 datasheet | 2sc1627 | aoe6936 datasheet | g40t60an3h datasheet | j5027-r datasheet | transistor a1015 datasheet | bf199 transistor equivalent
