All MOSFET. MTP36N06V Datasheet

 

MTP36N06V Datasheet and Replacement


   Type Designator: MTP36N06V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 138 nS
   Cossⓘ - Output Capacitance: 337 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-220AB
 

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MTP36N06V Datasheet (PDF)

 ..1. Size:165K  motorola
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MTP36N06V

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP36N06V/DDesigner's Data SheetMTP36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-32 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSn

 ..2. Size:188K  motorola
 mtp36n06v .pdf pdf_icon

MTP36N06V

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP36N06V/DDesigner's Data SheetMTP36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-32 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSn

 ..3. Size:202K  onsemi
 mtp36n06v.pdf pdf_icon

MTP36N06V

MTP36N06VPreferred DevicePower MOSFET32 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge32 AMPEREScircuits where di

Datasheet: MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , MTP2P50EG , MTP3055V , MTP30P06V , 2N7002 , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 , MTP3N75 , MTP3N80 , MTP3N95 .

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