MTP36N06V MOSFET Datasheet: N-Ch, 60V, 32A. Full specification with pinout and replacement list

MTP36N06V Specs and Replacement

Type Designator: MTP36N06V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 138 nS

Cossⓘ - Output Capacitance: 337 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-220AB

MTP36N06V substitution

- MOSFET ⓘ Cross-Reference Search

MTP36N06V datasheet

..1. Size:165K motorola
mtp36n06v.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n... See More ⇒

..2. Size:188K motorola
mtp36n06v .pdf pdf_icon

..3. Size:202K onsemi
mtp36n06v.pdf pdf_icon

MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 32 AMPERES circuits where di... See More ⇒

Detailed specifications: MTP2N80, MTP2N85, MTP2N90, MTP2P45, MTP2P50, MTP2P50EG, MTP3055V, MTP30P06V, MMIS60R580P, MTP3N100, MTP3N120E, MTP3N35, MTP3N40, MTP3N55, MTP3N75, MTP3N80, MTP3N95