MTP36N06V Datasheet and Replacement
Type Designator: MTP36N06V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 138 nS
Cossⓘ - Output Capacitance: 337 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-220AB
MTP36N06V substitution
MTP36N06V Datasheet (PDF)
mtp36n06v.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP36N06V/DDesigner's Data SheetMTP36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-32 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSn
mtp36n06v .pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP36N06V/DDesigner's Data SheetMTP36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-32 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSn
mtp36n06v.pdf

MTP36N06VPreferred DevicePower MOSFET32 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge32 AMPEREScircuits where di
Datasheet: MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , MTP2P50EG , MTP3055V , MTP30P06V , 2N7002 , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 , MTP3N75 , MTP3N80 , MTP3N95 .
History: 50N06AF | NP88N075CUE
Keywords - MTP36N06V MOSFET datasheet
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History: 50N06AF | NP88N075CUE



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