MTP36N06V
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP36N06V
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 138
nS
Cossⓘ -
Output Capacitance: 337
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO-220AB
MTP36N06V
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP36N06V
Datasheet (PDF)
..1. Size:165K motorola
mtp36n06v.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP36N06V/DDesigner's Data SheetMTP36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-32 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSn
..2. Size:188K motorola
mtp36n06v .pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP36N06V/DDesigner's Data SheetMTP36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-32 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSn
..3. Size:202K onsemi
mtp36n06v.pdf
MTP36N06VPreferred DevicePower MOSFET32 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge32 AMPEREScircuits where di
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