MTP36N06V - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n

MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 32 AMPERES circuits where di