MTP3N120E Todos los transistores

 

MTP3N120E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP3N120E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.6 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-220AB

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MTP3N120E datasheet

 ..1. Size:217K  motorola
 mtp3n120e.pdf pdf_icon

MTP3N120E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS

 ..2. Size:176K  onsemi
 mtp3n120e.pdf pdf_icon

MTP3N120E

MTP3N120E Designer s Data Sheet TMOS E-FET. Power Field Effect Transistor N-Channel Enhancement-Mode Silicon http //onsemi.com Gate This advanced high-voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast TO-220AB recovery time. Designed for high voltage, hi

 0.1. Size:252K  motorola
 mtp3n120e-.pdf pdf_icon

MTP3N120E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS

 8.1. Size:179K  motorola
 mtp3n100e.pdf pdf_icon

MTP3N120E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's Data Sheet MTP3N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de

MOSTRAR MÁS

Otros transistores... MTP2N90 , MTP2P45 , MTP2P50 , MTP2P50EG , MTP3055V , MTP30P06V , MTP36N06V , MTP3N100 , AO4407A , MTP3N35 , MTP3N40 , MTP3N55 , MTP3N75 , MTP3N80 , MTP3N95 , MTP3P25 , MTP4N08 .

History: MDS3754ARH

 

 

 

 

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