MTP3N120E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP3N120E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12.6 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-220AB

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MTP3N120E Datasheet (PDF)

..1. Size:217K motorola
mtp3n120e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS

..2. Size:176K onsemi
mtp3n120e.pdf

MTP3N120EDesigners Data SheetTMOS E-FET.Power Field EffectTransistorN-Channel Enhancement-Mode Siliconhttp://onsemi.comGateThis advanced high-voltage TMOS E-FET is designed to withstandhigh energy in the avalanche mode and switch efficiently. This newhigh energy device also offers a drain-to-source diode with fastTO-220ABrecovery time. Designed for high voltage, hi

0.1. Size:252K motorola
mtp3n120e-.pdf

8.1. Size:179K motorola
mtp3n100e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde

8.2. Size:56K motorola
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