All MOSFET. MTP3N120E Datasheet

 

MTP3N120E Datasheet and Replacement


   Type Designator: MTP3N120E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220AB
      - MOSFET Cross-Reference Search

 

MTP3N120E Datasheet (PDF)

 ..1. Size:217K  motorola
 mtp3n120e.pdf pdf_icon

MTP3N120E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS

 ..2. Size:176K  onsemi
 mtp3n120e.pdf pdf_icon

MTP3N120E

MTP3N120EDesigners Data SheetTMOS E-FET.Power Field EffectTransistorN-Channel Enhancement-Mode Siliconhttp://onsemi.comGateThis advanced high-voltage TMOS E-FET is designed to withstandhigh energy in the avalanche mode and switch efficiently. This newhigh energy device also offers a drain-to-source diode with fastTO-220ABrecovery time. Designed for high voltage, hi

 0.1. Size:252K  motorola
 mtp3n120e-.pdf pdf_icon

MTP3N120E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS

 8.1. Size:179K  motorola
 mtp3n100e.pdf pdf_icon

MTP3N120E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde

SHOW MORE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VBL2610N | WML11N80M3 | PSMN8R5-100ES | HM4453 | MTP3055A | SM420R50CT9RL | STP85N3LH5

Keywords - MTP3N120E MOSFET datasheet

 MTP3N120E cross reference
 MTP3N120E equivalent finder
 MTP3N120E lookup
 MTP3N120E substitution
 MTP3N120E replacement

 

 
Back to Top

 


 
.