MTP3N120E PDF and Equivalents Search

 

MTP3N120E Specs and Replacement

Type Designator: MTP3N120E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.6 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-220AB

MTP3N120E substitution

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MTP3N120E datasheet

 ..1. Size:217K  motorola
 mtp3n120e.pdf pdf_icon

MTP3N120E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS ... See More ⇒

 ..2. Size:176K  onsemi
 mtp3n120e.pdf pdf_icon

MTP3N120E

MTP3N120E Designer s Data Sheet TMOS E-FET. Power Field Effect Transistor N-Channel Enhancement-Mode Silicon http //onsemi.com Gate This advanced high-voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast TO-220AB recovery time. Designed for high voltage, hi... See More ⇒

 0.1. Size:252K  motorola
 mtp3n120e-.pdf pdf_icon

MTP3N120E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS ... See More ⇒

 8.1. Size:179K  motorola
 mtp3n100e.pdf pdf_icon

MTP3N120E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's Data Sheet MTP3N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de... See More ⇒

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Detailed specifications: MTP2N90, MTP2P45, MTP2P50, MTP2P50EG, MTP3055V, MTP30P06V, MTP36N06V, MTP3N100, AO4407A, MTP3N35, MTP3N40, MTP3N55, MTP3N75, MTP3N80, MTP3N95, MTP3P25, MTP4N08

Keywords - MTP3N120E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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