MTP4N85 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP4N85
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 850 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: TO-220AB

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MTP4N85 Datasheet (PDF)

..1. Size:56K motorola
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

8.1. Size:245K motorola
mtp4n80e.pdf

MTP4N80 PCB24MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N80E/DDesigner's Data SheetMTP4N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESs

8.2. Size:159K motorola
mtp4n80erev5.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N80E/DDesigner's Data SheetMTP4N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESscheme to provide enhanced voltageblocking capability without800 VOLTSdegra

9.1. Size:254K motorola
mtp4n50erev1a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N50E/DDesigner's Data SheetMTP4N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to4.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new

9.2. Size:138K motorola
mtp4n40e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N40E/DDesigner's Data SheetMTP4N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

9.3. Size:217K motorola
mtp4n50e.pdf