MTP4N85 Datasheet. Specs and Replacement

Type Designator: MTP4N85  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V

|Id| ⓘ - Maximum Drain Current: 4 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-220AB

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MTP4N85 datasheet

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MTP4N85

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MTP4N80 PCB 24 MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES s... See More ⇒

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra... See More ⇒

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new ... See More ⇒

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Detailed specifications: MTP3P25, MTP4N08, MTP4N10, MTP4N40E, MTP4N45, MTP4N50, MTP4N60, MTP4N80E, IRFP460, MTP4N90, MTP50N06V, MTP50P03HDLG, MTP5N05, MTP5N06, MTP5N35, MTP5N40, MTP5N40E

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