MTP50N06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP50N06V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 42 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 47 nC
Tiempo de subida (tr): 122 nS
Conductancia de drenaje-sustrato (Cd): 465 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET MTP50N06V
MTP50N06V Datasheet (PDF)
mtp50n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL
mtp50n06v.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.028(Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these
mtp50n06vrev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL
mtp50n06vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06VL/DDesigner's Data SheetMTP50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-42 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp50n06el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06EL/DDesigner's Data SheetMTP50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high50 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeff
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
