MTP50N06V Datasheet PDF and Equivalents Search

 ..1. Size:166K  motorola
 mtp50n06v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06V/D Designer's Data Sheet MTP50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOL... See More ⇒

 ..2. Size:107K  njs
 mtp50n06v.pdf

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 ..3. Size:145K  inchange semiconductor
 mtp50n06v.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- VDSS= 60V(Min) Static Drain-Source On-Resistance RDS(on) = 0.028 (Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these ... See More ⇒

 0.1. Size:179K  motorola
 mtp50n06vrev3.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06V/D Designer's Data Sheet MTP50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOL... See More ⇒

 0.2. Size:195K  motorola
 mtp50n06vl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06VL/D Designer's Data Sheet MTP50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS ... See More ⇒

 6.1. Size:232K  motorola
 mtp50n06el.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06EL/D Designer's Data Sheet MTP50N06EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 50 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS eff... See More ⇒