MTP50N06V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP50N06V
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 47 nC
trⓘ - Время нарастания: 122 ns
Cossⓘ - Выходная емкость: 465 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: TO-220AB
MTP50N06V Datasheet (PDF)
mtp50n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL
mtp50n06v.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.028(Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these
mtp50n06vrev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL
mtp50n06vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06VL/DDesigner's Data SheetMTP50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-42 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp50n06el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06EL/DDesigner's Data SheetMTP50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high50 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeff
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD