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MTP50N06V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTP50N06V
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 47 nC
   trⓘ - Время нарастания: 122 ns
   Cossⓘ - Выходная емкость: 465 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTP50N06V

 

 

MTP50N06V Datasheet (PDF)

 ..1. Size:166K  motorola
mtp50n06v.pdf

MTP50N06V MTP50N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL

 ..2. Size:107K  njs
mtp50n06v.pdf

MTP50N06V MTP50N06V

 ..3. Size:145K  inchange semiconductor
mtp50n06v.pdf

MTP50N06V MTP50N06V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.028(Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these

 0.1. Size:179K  motorola
mtp50n06vrev3.pdf

MTP50N06V MTP50N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL

 0.2. Size:195K  motorola
mtp50n06vl.pdf

MTP50N06V MTP50N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06VL/DDesigner's Data SheetMTP50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-42 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 6.1. Size:232K  motorola
mtp50n06el.pdf

MTP50N06V MTP50N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06EL/DDesigner's Data SheetMTP50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high50 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeff

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