MTP50N06V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP50N06V
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 42 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 47 nC
Время нарастания (tr): 122 ns
Выходная емкость (Cd): 465 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: TO-220AB
MTP50N06V Datasheet (PDF)
mtp50n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL
mtp50n06v.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.028(Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these
mtp50n06vrev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 42 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOL
mtp50n06vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06VL/DDesigner's Data SheetMTP50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-42 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp50n06el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06EL/DDesigner's Data SheetMTP50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high50 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeff
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