MTP50N06V - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06V/D Designer's Data Sheet MTP50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOL

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- VDSS= 60V(Min) Static Drain-Source On-Resistance RDS(on) = 0.028 (Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06V/D Designer's Data Sheet MTP50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06VL/D Designer's Data Sheet MTP50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06EL/D Designer's Data Sheet MTP50N06EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 50 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS eff