MTP8N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP8N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 147 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO-220C
Búsqueda de reemplazo de MTP8N60 MOSFET
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MTP8N60 datasheet
mtp8n50erev2x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N50E/D Designer's Data Sheet MTP8N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 8.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time.
mtp8n06erev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N06E/D Designer's Data Sheet MTP8N06E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 8.0 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS effici
mtp8n06e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N06E/D Designer's Data Sheet MTP8N06E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 8.0 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS effici
Otros transistores... MTP6P20E , MTP7N18 , MTP7N20 , MTP7N60 , MTP7P05 , MTP7P06 , MTP8N20 , MTP8N50E , 2N7002 , MTP8P08 , MTP8P10 , MTP8P25 , MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E .
History: BSZ180P03NS3G | BSZ088N03MSG
History: BSZ180P03NS3G | BSZ088N03MSG
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