MTP8N60 Todos los transistores

 

MTP8N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP8N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220C

 Búsqueda de reemplazo de MOSFET MTP8N60

 

MTP8N60 Datasheet (PDF)

 ..1. Size:58K  njs
mtp8n60.pdf

MTP8N60
MTP8N60

 9.1. Size:158K  motorola
mtp8n50erev2x.pdf

MTP8N60
MTP8N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.

 9.2. Size:212K  motorola
mtp8n06erev1.pdf

MTP8N60
MTP8N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici

 9.3. Size:185K  motorola
mtp8n06e.pdf

MTP8N60
MTP8N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici

 9.4. Size:119K  motorola
mtp8n50e.pdf

MTP8N60
MTP8N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.

 9.5. Size:95K  njs
mtm8n20 mtp8n20.pdf

MTP8N60
MTP8N60

 9.6. Size:932K  cn vbsemi
mtp8n06.pdf

MTP8N60
MTP8N60

MTP8N06www.VBsemi.twN-Channel 60 V(D-S) MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 Fast switchingRDS(on) ()VGS = 10 V 0.072 Ease of parallelingQg max. (nC) 25Simple drive requirementsQgs (nC) 5.8Qgd (nC) 11Configuration SingleDTO-220ABGSDGSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)P

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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