All MOSFET. MTP8N60 Datasheet

 

MTP8N60 Datasheet and Replacement


   Type Designator: MTP8N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220C
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MTP8N60 Datasheet (PDF)

 ..1. Size:58K  njs
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MTP8N60

 9.1. Size:158K  motorola
 mtp8n50erev2x.pdf pdf_icon

MTP8N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.

 9.2. Size:212K  motorola
 mtp8n06erev1.pdf pdf_icon

MTP8N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici

 9.3. Size:185K  motorola
 mtp8n06e.pdf pdf_icon

MTP8N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici

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History: TK2P60D | IRFBG20

Keywords - MTP8N60 MOSFET datasheet

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