MTP8N60 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N50E/D Designer's Data Sheet MTP8N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 8.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time.

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N06E/D Designer's Data Sheet MTP8N06E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 8.0 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS effici

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N06E/D Designer's Data Sheet MTP8N06E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 8.0 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS effici

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N50E/D Designer's Data Sheet MTP8N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 8.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time.

MTP8N06 www.VBsemi.tw N-Channel 60 V(D-S) MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 60 Fast switching RDS(on) ( )VGS = 10 V 0.072 Ease of paralleling Qg max. (nC) 25 Simple drive requirements Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D TO-220AB G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) P