2SK752 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK752

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 160 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Resistencia drenaje-fuente RDS(on): 1 Ohm

Empaquetado / Estuche: TO220F

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2SK752 Datasheet (PDF)

1.1. 2sk752.pdf Size:233K _update-mosfet

isc N-Channel MOSFET Transistor 2SK752 DESCRIPTION ·Drain Current –I = 3A@ T =25℃ D C ·Drain Source Voltage- : V = 160V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching applications such as switching regulators, converters,relay drivers. ABSOLUTE MAXIMUM RATINGS(T =2

5.1. 2sk757.pdf Size:232K _update-mosfet

isc N-Channel MOSFET Transistor 2SK757 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 200V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 20

5.2. 2sk759.pdf Size:234K _update-mosfet

isc N-Channel MOSFET Transistor 2SK759 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay d

5.3. 2sk753.pdf Size:233K _update-mosfet

isc N-Channel MOSFET Transistor 2SK753 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V = 160V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160

5.4. 2sk756.pdf Size:234K _update-mosfet

isc N-Channel MOSFET Transistor 2SK756 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V = 200V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMU

5.5. 2sk750.pdf Size:235K _update-mosfet

isc N-Channel MOSFET Transistor 2SK750 DESCRIPTION ·Drain Current –I = 20A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1

5.6. 2sk751.pdf Size:240K _update-mosfet

isc N-Channel MOSFET Transistor 2SK751 DESCRIPTION ·Drain Current –I = 20A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1

5.7. 2sk755.pdf Size:233K _update-mosfet

isc N-Channel MOSFET Transistor 2SK755 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =200V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 200

5.8. 2sk758.pdf Size:234K _update-mosfet

isc N-Channel MOSFET Transistor 2SK758 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay d

5.9. 2sk754.pdf Size:232K _update-mosfet

isc N-Channel MOSFET Transistor 2SK754 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 160V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 16

5.10. 2sk758.pdf Size:33K _panasonic

Power F-MOS FETs 2SK758 2SK758 Silicon N-Channel Power F-MOS Unit : mm Features 10.0� 0.2 4.2� 0.2 Low ON-resistance RDS(on) : RDS(on) = 0.45?(typ) 5.5� 0.2 2.7� 0.2 High-speed switching : tf = 45ns(typ) No secondary breakdown o3.1� 0.1 Applications DC-DC converter 1.3� 0.2 1.4� 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8� 0.1 Motor drive 2.54� 0.25 5.08� 0.5 A

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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