2SK752 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK752
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 160
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 3
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1
Ohm
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de 2SK752 MOSFET
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Selección ⓘ de transistores por parámetros
2SK752 PDF Specs
..1. Size:233K inchange semiconductor
2sk752.pdf 
isc N-Channel MOSFET Transistor 2SK752 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching applications such as switching regulators, converters,relay drivers. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
9.1. Size:33K panasonic
2sk758.pdf 
Power F-MOS FETs 2SK758 2SK758 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on) = 0.45 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 45ns(typ) No secondary breakdown 3.1 0.1 Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.25... See More ⇒
9.2. Size:233K inchange semiconductor
2sk753.pdf 
isc N-Channel MOSFET Transistor 2SK753 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160... See More ⇒
9.3. Size:232K inchange semiconductor
2sk757.pdf 
isc N-Channel MOSFET Transistor 2SK757 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 20... See More ⇒
9.4. Size:232K inchange semiconductor
2sk754.pdf 
isc N-Channel MOSFET Transistor 2SK754 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 16... See More ⇒
9.5. Size:240K inchange semiconductor
2sk751.pdf 
isc N-Channel MOSFET Transistor 2SK751 DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1... See More ⇒
9.6. Size:235K inchange semiconductor
2sk750.pdf 
isc N-Channel MOSFET Transistor 2SK750 DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1... See More ⇒
9.7. Size:234K inchange semiconductor
2sk758.pdf 
isc N-Channel MOSFET Transistor 2SK758 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay d... See More ⇒
9.8. Size:234K inchange semiconductor
2sk759.pdf 
isc N-Channel MOSFET Transistor 2SK759 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay d... See More ⇒
9.9. Size:234K inchange semiconductor
2sk756.pdf 
isc N-Channel MOSFET Transistor 2SK756 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMU... See More ⇒
9.10. Size:233K inchange semiconductor
2sk755.pdf 
isc N-Channel MOSFET Transistor 2SK755 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 200 ... See More ⇒
Otros transistores... 2SK637
, 2SK638
, 2SK667
, 2SK745
, 2SK746
, 2SK749
, 2SK750
, 2SK751
, IRLZ44N
, 2SK753
, 2SK754
, 2SK755
, 2SK756
, 2SK757
, 2SK759
, 2SK763
, 2SK766
.