2SK752 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK752
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F

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2SK752 Datasheet (PDF)

..1. Size:233K inchange semiconductor
2sk752.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK752DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching applicationssuch as switching regulators, converters,relay drivers.ABSOLUTE MAXIMUM RATINGS(T =2

9.1. Size:33K panasonic
2sk758.pdf pdf_icon

Power F-MOS FETs 2SK7582SK758Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on) = 0.45(typ) 5.5 0.2 2.7 0.2High-speed switching : tf = 45ns(typ)No secondary breakdown3.1 0.1 ApplicationsDC-DC converter1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor drive2.54 0.25

9.2. Size:233K inchange semiconductor
2sk753.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK753DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 160

9.3. Size:232K inchange semiconductor
2sk757.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK757DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 20

9.4. Size:232K inchange semiconductor
2sk754.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK754DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 16

9.5. Size:240K inchange semiconductor
2sk751.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK751DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 1

9.6. Size:235K inchange semiconductor
2sk750.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK750DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 1

9.7. Size:234K inchange semiconductor
2sk758.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK758DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay d

9.8. Size:234K inchange semiconductor
2sk759.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK759DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay d

9.9. Size:234K inchange semiconductor
2sk756.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK756DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXIMU

9.10. Size:233K inchange semiconductor
2sk755.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK755DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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2SK752 MOSFET. Datasheet pdf. Equivalent

2SK752 Datasheet (PDF)

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