GP1M003A090XX Todos los transistores

 

GP1M003A090XX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GP1M003A090XX
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.1 Ohm
   Paquete / Cubierta: TO-252 TO-251

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GP1M003A090XX Datasheet (PDF)

 ..1. Size:941K  globalpower
gp1m003a090xx.pdf

GP1M003A090XX
GP1M003A090XX

GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

 5.1. Size:388K  globalpower
gp1m003a080xx.pdf

GP1M003A090XX
GP1M003A090XX

GP1M003A080H/ GP1M003A080FGP1M003A080HH/ GP1M003A080FHVDSS = 880 V @TjmaxFeaturesID = 3A Low gate chargeRDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F

 5.2. Size:418K  globalpower
gp1m003a050hg-fg.pdf

GP1M003A090XX
GP1M003A090XX

GP1M003A050HGGP1M003A050FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 2.5A

 5.3. Size:517K  globalpower
gp1m003a050xg.pdf

GP1M003A090XX
GP1M003A090XX

GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 5.4. Size:492K  globalpower
gp1m003a080xg.pdf

GP1M003A090XX
GP1M003A090XX

GP1M003A080CG GP1M003A080PG Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M003A080CH/GP1M003A080PH D-PAK/I-PAK GP1M003A080CH/GP1M003A080PH Halog

 5.5. Size:482K  globalpower
gp1m003a040xg.pdf

GP1M003A090XX
GP1M003A090XX

GP1M003A040CG GP1M003A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark GP1M003A040CG D-PAK GP1M003A040CG RoHS

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