GP1M003A090XX - описание и поиск аналогов

GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F

GP1M003A050HG GP1M003A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

GP1M003A080CG GP1M003A080PG Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M003A080CH/GP1M003A080PH D-PAK/I-PAK GP1M003A080CH/GP1M003A080PH Halog

GP1M003A040CG GP1M003A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark GP1M003A040CG D-PAK GP1M003A040CG RoHS