GP1M003A090XX Datasheet and Replacement
Type Designator: GP1M003A090XX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm
Package: TO-252 TO-251
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GP1M003A090XX Datasheet (PDF)
gp1m003a090xx.pdf
GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A
gp1m003a080xx.pdf
GP1M003A080H/ GP1M003A080FGP1M003A080HH/ GP1M003A080FHVDSS = 880 V @TjmaxFeaturesID = 3A Low gate chargeRDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F
gp1m003a050hg-fg.pdf
GP1M003A050HGGP1M003A050FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 2.5A
gp1m003a050xg.pdf
GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SSP7440N | WMM07N65C4 | SM4186T9RL | TPCA8047-H | APT10021JFLL | NP180N04TUJ | ZVN4210GTC
Keywords - GP1M003A090XX MOSFET datasheet
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History: SSP7440N | WMM07N65C4 | SM4186T9RL | TPCA8047-H | APT10021JFLL | NP180N04TUJ | ZVN4210GTC
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