All MOSFET. GP1M003A090XX Datasheet

 

GP1M003A090XX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP1M003A090XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm
   Package: TO-252 TO-251

 GP1M003A090XX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP1M003A090XX Datasheet (PDF)

 ..1. Size:941K  globalpower
 gp1m003a090xx.pdf

GP1M003A090XX GP1M003A090XX

GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

 5.1. Size:388K  globalpower
 gp1m003a080xx.pdf

GP1M003A090XX GP1M003A090XX

GP1M003A080H/ GP1M003A080FGP1M003A080HH/ GP1M003A080FHVDSS = 880 V @TjmaxFeaturesID = 3A Low gate chargeRDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F

 5.2. Size:418K  globalpower
 gp1m003a050hg-fg.pdf

GP1M003A090XX GP1M003A090XX

GP1M003A050HGGP1M003A050FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 2.5A

 5.3. Size:517K  globalpower
 gp1m003a050xg.pdf

GP1M003A090XX GP1M003A090XX

GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 5.4. Size:492K  globalpower
 gp1m003a080xg.pdf

GP1M003A090XX GP1M003A090XX

GP1M003A080CG GP1M003A080PG Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M003A080CH/GP1M003A080PH D-PAK/I-PAK GP1M003A080CH/GP1M003A080PH Halog

 5.5. Size:482K  globalpower
 gp1m003a040xg.pdf

GP1M003A090XX GP1M003A090XX

GP1M003A040CG GP1M003A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark GP1M003A040CG D-PAK GP1M003A040CG RoHS

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