GP1M003A090XX MOSFET Datasheet: N-Ch, 900V, 2.5A. Full specification with pinout and replacement list

GP1M003A090XX Specs and Replacement

Type Designator: GP1M003A090XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm

Package: TO-252 TO-251

GP1M003A090XX substitution

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GP1M003A090XX datasheet

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GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A ... See More ⇒

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GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F... See More ⇒

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