All MOSFET. GP1M003A090XX Datasheet

 

GP1M003A090XX Datasheet and Replacement


   Type Designator: GP1M003A090XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm
   Package: TO-252 TO-251
 

 GP1M003A090XX substitution

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GP1M003A090XX Datasheet (PDF)

 ..1. Size:941K  globalpower
 gp1m003a090xx.pdf pdf_icon

GP1M003A090XX

GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

 5.1. Size:388K  globalpower
 gp1m003a080xx.pdf pdf_icon

GP1M003A090XX

GP1M003A080H/ GP1M003A080FGP1M003A080HH/ GP1M003A080FHVDSS = 880 V @TjmaxFeaturesID = 3A Low gate chargeRDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F

 5.2. Size:418K  globalpower
 gp1m003a050hg-fg.pdf pdf_icon

GP1M003A090XX

GP1M003A050HGGP1M003A050FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 2.5A

 5.3. Size:517K  globalpower
 gp1m003a050xg.pdf pdf_icon

GP1M003A090XX

GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

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Datasheet: GMP80N75 , GMS2301 , GMS2302 , GP1M003A040XG , GP1M003A050HG-FG , GP1M003A050XG , GP1M003A080XG , GP1M003A080XX , IRF1405 , GP1M004A090XX , GP1M005A040XG , GP1M005A050XH , GP1M005A050XX , GP1M005A050XXX , GP1M006A065XH , GP1M006A065XX , GP1M006A070XX .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - GP1M003A090XX MOSFET datasheet

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