GP1M011A050XX Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GP1M011A050XX

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 158 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm

Encapsulados: TO-220 TO-220F

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GP1M011A050XX datasheet

 ..1. Size:395K  globalpower
gp1m011a050xx.pdf pdf_icon

GP1M011A050XX

GP1M011A050H GP1M011A050FH VDSS = 550 V @Tjmax Features ID = 11A Low gate charge RDS(ON) = 0.67 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M011A050H TO-220 GP1M011A050H RoHS GP1M011A050FH TO-220F GP1M011A0

 0.1. Size:395K  globalpower
gp1m011a050xxx.pdf pdf_icon

GP1M011A050XX

GP1M011A050HS GP1M011A050FSH VDSS = 550 V @Tjmax Features ID = 10A Low gate charge RDS(ON) = 0.7 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M011A050HS TO-220 GP1M011A050HS RoHS/Fast Diode GP1M011A050FSH TO

 8.1. Size:389K  globalpower
gp1m013a050xx.pdf pdf_icon

GP1M011A050XX

GP1M013A050H GP1M013A050FH VDSS = 550 V @Tjmax Features ID = 13A Low gate charge RDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M013A050H TO-220 GP1M013A050H RoHS GP1M013A050FH TO-220F GP1M013A050FH Halogen Free Absolute

 8.2. Size:370K  globalpower
gp1m018a020xx.pdf pdf_icon

GP1M011A050XX

GP1M018A020HG(H) GP1M018A020FG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A

Otros transistores... GP1M009A050XXX, GP1M009A060XX, GP1M009A070X, GP1M009A090N, GP1M009A090XX, GP1M010A060XX, GP1M010A080N, GP1M010A080XX, IRF640, GP1M011A050XXX, GP1M012A060XX, GP1M013A050XX, GP1M015A050XX, GP1M016A025XG, GP1M016A025XX, GP1M016A060N, GP1M016A060XX