GP1M011A050XX Datasheet. Specs and Replacement

Type Designator: GP1M011A050XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 28 nC

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm

Package: TO-220 TO-220F

GP1M011A050XX substitution

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GP1M011A050XX datasheet

 ..1. Size:395K  globalpower
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GP1M011A050XX

GP1M011A050H GP1M011A050FH VDSS = 550 V @Tjmax Features ID = 11A Low gate charge RDS(ON) = 0.67 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M011A050H TO-220 GP1M011A050H RoHS GP1M011A050FH TO-220F GP1M011A0... See More ⇒

 0.1. Size:395K  globalpower
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GP1M011A050XX

GP1M011A050HS GP1M011A050FSH VDSS = 550 V @Tjmax Features ID = 10A Low gate charge RDS(ON) = 0.7 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M011A050HS TO-220 GP1M011A050HS RoHS/Fast Diode GP1M011A050FSH TO... See More ⇒

 8.1. Size:389K  globalpower
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GP1M011A050XX

GP1M013A050H GP1M013A050FH VDSS = 550 V @Tjmax Features ID = 13A Low gate charge RDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M013A050H TO-220 GP1M013A050H RoHS GP1M013A050FH TO-220F GP1M013A050FH Halogen Free Absolute ... See More ⇒

 8.2. Size:370K  globalpower
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GP1M011A050XX

GP1M018A020HG(H) GP1M018A020FG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A ... See More ⇒

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Detailed specifications: GP1M009A050XXX, GP1M009A060XX, GP1M009A070X, GP1M009A090N, GP1M009A090XX, GP1M010A060XX, GP1M010A080N, GP1M010A080XX, IRF640, GP1M011A050XXX, GP1M012A060XX, GP1M013A050XX, GP1M015A050XX, GP1M016A025XG, GP1M016A025XX, GP1M016A060N, GP1M016A060XX

Keywords - GP1M011A050XX MOSFET specs

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