GP1T080A120B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GP1T080A120B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 64 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 188 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET GP1T080A120B

GP1T080A120B Datasheet (PDF)

..1. Size:421K globalpower
gp1t080a120b.pdf

PRELIMINARYGP1T080A120BVDS 1200 VRDS,on 80mWID 32 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

9.1. Size:420K globalpower
gp1t040a120b.pdf

PRELIMINARYGP1T040A120BVDS 1200 VRDS,on 40mWID 62 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

9.2. Size:420K globalpower
gp1t025a120b.pdf

PRELIMINARYGP1T025A120BVDS 1200 VRDS,on 25mWID 100 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverte

9.3. Size:379K globalpower
gp1t072a060b.pdf

PRELIMINARYGP1T072A060BVDS 600 VRDS,on 72mWID 40 A600V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

9.4. Size:379K globalpower
gp1t036a060b.pdf

PRELIMINARYGP1T036A060BVDS 600 VRDS,on 36mWID 80 A600V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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