Справочник MOSFET. GP1T080A120B

 

GP1T080A120B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: GP1T080A120B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 188 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для GP1T080A120B

 

 

GP1T080A120B Datasheet (PDF)

 ..1. Size:421K  globalpower
 gp1t080a120b.pdf

GP1T080A120B GP1T080A120B

PRELIMINARYGP1T080A120BVDS 1200 VRDS,on 80mWID 32 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

 9.1. Size:420K  globalpower
 gp1t040a120b.pdf

GP1T080A120B GP1T080A120B

PRELIMINARYGP1T040A120BVDS 1200 VRDS,on 40mWID 62 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

 9.2. Size:420K  globalpower
 gp1t025a120b.pdf

GP1T080A120B GP1T080A120B

PRELIMINARYGP1T025A120BVDS 1200 VRDS,on 25mWID 100 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverte

 9.3. Size:379K  globalpower
 gp1t072a060b.pdf

GP1T080A120B GP1T080A120B

PRELIMINARYGP1T072A060BVDS 600 VRDS,on 72mWID 40 A600V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

 9.4. Size:379K  globalpower
 gp1t036a060b.pdf

GP1T080A120B GP1T080A120B

PRELIMINARYGP1T036A060BVDS 600 VRDS,on 36mWID 80 A600V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RZR025P01

 

 
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