GP1T080A120B MOSFET. Datasheet pdf. Equivalent

   Type Designator: GP1T080A120B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 188 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-247

GP1T080A120B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS