GP2M007A080F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GP2M007A080F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET GP2M007A080F

GP2M007A080F Datasheet (PDF)

..1. Size:242K globalpower
gp2m007a080f.pdf

GP2M007A080FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability800V 7A

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GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A

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GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A

8.3. Size:419K globalpower
gp2m004a060xx.pdf

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8.4. Size:505K globalpower
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GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A

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gp2m004a060xg.pdf

GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

8.8. Size:522K globalpower
gp2m008a060xxx.pdf

GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

8.9. Size:394K globalpower
gp2m002a065xx.pdf

GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A

8.10. Size:499K globalpower
gp2m002a065xg.pdf

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

8.11. Size:500K globalpower
gp2m005a050xg.pdf

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8.12. Size:240K globalpower
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GP2M009A090FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability 900V 9A

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gp2m004a065xg.pdf

GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

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GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

8.15. Size:405K globalpower
gp2m002a060xg.pdf

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gp2m008a060xgx.pdf

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