GP2M007A080F Datasheet. Specs and Replacement

Type Designator: GP2M007A080F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO-220F

GP2M007A080F substitution

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GP2M007A080F datasheet

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GP2M007A080F

GP2M007A080F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge Improved dv/dt capability 800V 7A ... See More ⇒

 5.1. Size:416K  globalpower
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GP2M007A080F

GP2M007A065HG GP2M007A065FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

 8.1. Size:366K  globalpower
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GP2M007A080F

GP2M005A050HG GP2M005A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

 8.2. Size:410K  globalpower
 gp2m005a060xg.pdf pdf_icon

GP2M007A080F

GP2M005A060HG GP2M005A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒

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Detailed specifications: GP2M004A060XX, GP2M004A065XG, GP2M004A065XX, GP2M005A050XG, GP2M005A050XX, GP2M005A060XG, GP2M005A060XXX, GP2M007A065XG, AON7410, GP2M008A060XGX, GP2M008A060XXX, GP2M009A090FG, GP2M009A090NG, GP2M010A060X, GP2M010A065X, GP2M011A090NG, GP2M012A060X

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.