GP2M007A080F Datasheet and Replacement
Type Designator: GP2M007A080F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO-220F
GP2M007A080F substitution
GP2M007A080F Datasheet (PDF)
gp2m007a080f.pdf
GP2M007A080FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability800V 7A
gp2m007a065xg.pdf
GP2M007A065HGGP2M007A065FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 6.5A
gp2m005a050xx.pdf
GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A
gp2m005a060xg.pdf
GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A
Datasheet: GP2M004A060XX , GP2M004A065XG , GP2M004A065XX , GP2M005A050XG , GP2M005A050XX , GP2M005A060XG , GP2M005A060XXX , GP2M007A065XG , RFP50N06 , GP2M008A060XGX , GP2M008A060XXX , GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X , GP2M011A090NG , GP2M012A060X .
History: OSG65R380IF | MPGP10R033 | SI7336ADP | NTMFS4897NF | 2SK3575-ZK | MMN2302 | NCEA6050KA
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History: OSG65R380IF | MPGP10R033 | SI7336ADP | NTMFS4897NF | 2SK3575-ZK | MMN2302 | NCEA6050KA
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