GSM1013E Todos los transistores

 

GSM1013E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM1013E
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: SOT-523
 

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GSM1013E Datasheet (PDF)

 ..1. Size:621K  globaltech semi
 gsm1013e.pdf pdf_icon

GSM1013E

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage OperationThese devi

 7.1. Size:1012K  globaltech semi
 gsm1013.pdf pdf_icon

GSM1013E

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1013, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A,RDS(ON)=860m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-V

 8.1. Size:995K  globaltech semi
 gsm1012e.pdf pdf_icon

GSM1013E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power

 8.2. Size:987K  globaltech semi
 gsm1012.pdf pdf_icon

GSM1013E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation

MOSTRAR MÁS

Otros transistores... GP2M013A050F , GP2M020A050N , GP2M020A050X , GP2M020A060N , GP2M023A050N , GSM1012 , GSM1012E , GSM1013 , 5N65 , GSM1016 , GSM1023 , GSM1024 , GSM1024E , GSM1026S , GSM1032 , GSM1034 , GSM1072 .

History: AP4226GM-HF | BLS65R380-U | UT3458 | VBA4311 | 12N70KL-TF3T-T | 19N10G-TMS2-T | AP9487GM

 

 
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