All MOSFET. GSM1013E Datasheet

 

GSM1013E Datasheet and Replacement


   Type Designator: GSM1013E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SOT-523
 

 GSM1013E substitution

   - MOSFET ⓘ Cross-Reference Search

 

GSM1013E Datasheet (PDF)

 ..1. Size:621K  globaltech semi
 gsm1013e.pdf pdf_icon

GSM1013E

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage OperationThese devi

 7.1. Size:1012K  globaltech semi
 gsm1013.pdf pdf_icon

GSM1013E

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1013, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A,RDS(ON)=860m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-V

 8.1. Size:995K  globaltech semi
 gsm1012e.pdf pdf_icon

GSM1013E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power

 8.2. Size:987K  globaltech semi
 gsm1012.pdf pdf_icon

GSM1013E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation

SHOW MORE

Datasheet: GP2M013A050F , GP2M020A050N , GP2M020A050X , GP2M020A060N , GP2M023A050N , GSM1012 , GSM1012E , GSM1013 , 5N65 , GSM1016 , GSM1023 , GSM1024 , GSM1024E , GSM1026S , GSM1032 , GSM1034 , GSM1072 .

History: ZXMN10A08G | IXFN44N80P | AP92T03GP

Keywords - GSM1013E MOSFET datasheet

 GSM1013E cross reference
 GSM1013E equivalent finder
 GSM1013E lookup
 GSM1013E substitution
 GSM1013E replacement

 

 
Back to Top

 


 
.