GSM1072E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM1072E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: SOT-723

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GSM1072E datasheet

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GSM1072E

GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo

 7.1. Size:1003K  globaltech semi
 gsm1072.pdf pdf_icon

GSM1072E

GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low

 8.1. Size:625K  globaltech semi
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GSM1072E

GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m @VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui

 8.2. Size:957K  globaltech semi
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GSM1072E

GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V Low Offset (Error) Voltage These devices are part

MOSTRAR MÁS

Otros transistores... GSM1016, GSM1023, GSM1024, GSM1024E, GSM1026S, GSM1032, GSM1034, GSM1072, IRF2807, GSM1073, GSM1073E, GSM1303, GSM1304, GSM1304E, GSM1306, GSM1330S, GSM1413