All MOSFET. GSM1072E Datasheet

 

GSM1072E Datasheet and Replacement


   Type Designator: GSM1072E
   Marking Code: 20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.06 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT-723
 

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GSM1072E Datasheet (PDF)

 ..1. Size:515K  globaltech semi
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GSM1072E

GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo

 7.1. Size:1003K  globaltech semi
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GSM1072E

GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low

 8.1. Size:625K  globaltech semi
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GSM1072E

GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui

 8.2. Size:957K  globaltech semi
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GSM1072E

GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are part

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Datasheet: GSM1016 , GSM1023 , GSM1024 , GSM1024E , GSM1026S , GSM1032 , GSM1034 , GSM1072 , IRFB31N20D , GSM1073 , GSM1073E , GSM1303 , GSM1304 , GSM1304E , GSM1306 , GSM1330S , GSM1413 .

History: AONS66402 | MCG10P03

Keywords - GSM1072E MOSFET datasheet

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