GSM1330S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM1330S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.115 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SOT-323

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GSM1330S datasheet

 ..1. Size:540K  globaltech semi
 gsm1330s.pdf pdf_icon

GSM1330S

GSM1330S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)= 7.5 @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.05A , RDS(ON)= 7.5 @VGS=5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.1. Size:934K  globaltech semi
 gsm1304.pdf pdf_icon

GSM1330S

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m @VGS=1.8V Super high density cell design for extremely These device

 9.2. Size:936K  globaltech semi
 gsm1304e.pdf pdf_icon

GSM1330S

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m @VGS=1.8V Super high density cell design for extremely These devi

 9.3. Size:1193K  globaltech semi
 gsm1306.pdf pdf_icon

GSM1330S

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m @VGS=1.8V Super high density cell design for extremely These device

MOSTRAR MÁS

Otros transistores... GSM1072, GSM1072E, GSM1073, GSM1073E, GSM1303, GSM1304, GSM1304E, GSM1306, AO3400A, GSM1413, GSM1433, GSM1443, GSM1563, GSM1810, GSM1912, GSM1913, GSM2014