GSM1330S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM1330S
   Código: 6C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.225 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 0.115 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Conductancia de drenaje-sustrato (Cd): 10 pF
   Resistencia entre drenaje y fuente RDS(on): 7.5 Ohm
   Paquete / Cubierta: SOT-323

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GSM1330S Datasheet (PDF)

..1. Size:540K globaltech semi
gsm1330s.pdf

GSM1330S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)= 7.5@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.05A , RDS(ON)= 7.5@VGS=5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

9.1. Size:934K globaltech semi
gsm1304.pdf

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m@VGS=1.8V Super high density cell design for extremely These device

9.2. Size:936K globaltech semi
gsm1304e.pdf

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m@VGS=1.8V Super high density cell design for extremely These devi

9.3. Size:1193K globaltech semi
gsm1306.pdf

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m@VGS=1.8V Super high density cell design for extremely These device

9.4. Size:1006K globaltech semi
gsm1303.pdf

GSM1303 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1303, P-Channel enhancement mode -20V/-0.45A , RDS(ON)= 600m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A , RDS(ON)= 800m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A , RDS(ON)= 1300m@VGS=-1.8V Super high density cell design for extremely These de

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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