All MOSFET. GSM1330S Datasheet

 

GSM1330S Datasheet and Replacement


   Type Designator: GSM1330S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-323
 

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GSM1330S Datasheet (PDF)

 ..1. Size:540K  globaltech semi
 gsm1330s.pdf pdf_icon

GSM1330S

GSM1330S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)= 7.5@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.05A , RDS(ON)= 7.5@VGS=5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.1. Size:934K  globaltech semi
 gsm1304.pdf pdf_icon

GSM1330S

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m@VGS=1.8V Super high density cell design for extremely These device

 9.2. Size:936K  globaltech semi
 gsm1304e.pdf pdf_icon

GSM1330S

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m@VGS=1.8V Super high density cell design for extremely These devi

 9.3. Size:1193K  globaltech semi
 gsm1306.pdf pdf_icon

GSM1330S

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m@VGS=1.8V Super high density cell design for extremely These device

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Datasheet: GSM1072 , GSM1072E , GSM1073 , GSM1073E , GSM1303 , GSM1304 , GSM1304E , GSM1306 , RU6888R , GSM1413 , GSM1433 , GSM1443 , GSM1563 , GSM1810 , GSM1912 , GSM1913 , GSM2014 .

History: FQPF7N65CF105

Keywords - GSM1330S MOSFET datasheet

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