GSM1330S MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM1330S
Marking Code: 6C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.115 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-323
GSM1330S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM1330S Datasheet (PDF)
gsm1330s.pdf
GSM1330S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)= 7.5@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.05A , RDS(ON)= 7.5@VGS=5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm1304.pdf
GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m@VGS=1.8V Super high density cell design for extremely These device
gsm1304e.pdf
GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m@VGS=1.8V Super high density cell design for extremely These devi
gsm1306.pdf
GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m@VGS=1.8V Super high density cell design for extremely These device
gsm1303.pdf
GSM1303 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1303, P-Channel enhancement mode -20V/-0.45A , RDS(ON)= 600m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A , RDS(ON)= 800m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A , RDS(ON)= 1300m@VGS=-1.8V Super high density cell design for extremely These de
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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