GSM2301AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM2301AS

Código: S1*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 2.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 5.8 nC

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 223 pF

Resistencia drenaje-fuente RDS(on): 0.125 Ohm

Empaquetado / Estuche: SOT-23

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GSM2301AS Datasheet (PDF)

1.1. gsm2301as.pdf Size:877K _update-mosfet

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

2.1. gsm2301a.pdf Size:816K _update-mosfet

20V P-Channel Enhancement Mode MOSFET Product Description Features  -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V GSM2301A, P-Channel enhancement mode  -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

3.1. gsm2301.pdf Size:477K _update-mosfet

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode  -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-2.4A,RDS(ON)=155mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

3.2. gsm2301s.pdf Size:827K _update-mosfet

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode  -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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