GSM2301AS MOSFET PDF: P-Ch, 20V, 2.4A. Datasheet. Full specification with pinout and replacement list

GSM2301AS Specs and Replacement

   Type Designator: GSM2301AS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT-23

GSM2301AS substitution

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GSM2301AS datasheet

..1. Size:877K globaltech semi
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage ... See More ⇒

6.1. Size:816K globaltech semi
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20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low... See More ⇒

7.1. Size:827K globaltech semi
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt... See More ⇒

7.2. Size:477K globaltech semi
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta... See More ⇒

Detailed specifications: GSM1443 , GSM1563 , GSM1810 , GSM1912 , GSM1913 , GSM2014 , GSM2301 , GSM2301A , AON7403 , GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , GSM2304 , GSM2304A , GSM2304AS .