GSM2301AS MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM2301AS
Marking Code: S1*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 2.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5.8 nC
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 223 pF
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: SOT-23
GSM2301AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM2301AS Datasheet (PDF)
1.1. gsm2301as.pdf 
Size:877K _update-mosfet
20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage
1.2. gsm2301as.pdf Size:877K _globaltech_semi
20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage
2.1. gsm2301a.pdf Size:816K _update-mosfet
20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low
2.2. gsm2301a.pdf Size:816K _globaltech_semi
20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low
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