GSM2304A Todos los transistores

 

GSM2304A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM2304A
   Código: 04*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 2.3 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de GSM2304A MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM2304A Datasheet (PDF)

 ..1. Size:758K  globaltech semi
 gsm2304a.pdf pdf_icon

GSM2304A

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 0.1. Size:747K  globaltech semi
 gsm2304as.pdf pdf_icon

GSM2304A

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10VMOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5Vto provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

 7.1. Size:963K  globaltech semi
 gsm2304.pdf pdf_icon

GSM2304A

GSM2304 GSM230430V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 7.2. Size:754K  globaltech semi
 gsm2304s.pdf pdf_icon

GSM2304A

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O

MOSTRAR MÁS

Otros transistores... GSM2301A , GSM2301AS , GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , GSM2304 , AO4468 , GSM2304AS , GSM2304S , GSM2306A , GSM2306AE , GSM2307A , GSM2308 , GSM2308A , GSM2309 .

History: 2SK3506 | BSZ035N03LSG

 

 
Back to Top

 


 
.