GSM2304A PDF and Equivalents Search

 

GSM2304A PDF Specs and Replacement


   Type Designator: GSM2304A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: SOT-23
 

 GSM2304A substitution

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GSM2304A PDF Specs

 ..1. Size:758K  globaltech semi
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GSM2304A

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce... See More ⇒

 0.1. Size:747K  globaltech semi
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GSM2304A

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2... See More ⇒

 7.1. Size:963K  globaltech semi
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GSM2304A

GSM2304 GSM2304 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 7.2. Size:754K  globaltech semi
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GSM2304A

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O... See More ⇒

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Detailed specifications: GSM2301A , GSM2301AS , GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , GSM2304 , 60N06 , GSM2304AS , GSM2304S , GSM2306A , GSM2306AE , GSM2307A , GSM2308 , GSM2308A , GSM2309 .

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Keywords - GSM2304A MOSFET specs

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