All MOSFET. GSM2304A Datasheet

 

GSM2304A Datasheet and Replacement


   Type Designator: GSM2304A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: SOT-23
      - MOSFET Cross-Reference Search

 

GSM2304A Datasheet (PDF)

 ..1. Size:758K  globaltech semi
gsm2304a.pdf pdf_icon

GSM2304A

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 0.1. Size:747K  globaltech semi
gsm2304as.pdf pdf_icon

GSM2304A

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10VMOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5Vto provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

 7.1. Size:963K  globaltech semi
gsm2304.pdf pdf_icon

GSM2304A

GSM2304 GSM230430V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 7.2. Size:754K  globaltech semi
gsm2304s.pdf pdf_icon

GSM2304A

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

Keywords - GSM2304A MOSFET datasheet

 GSM2304A cross reference
 GSM2304A equivalent finder
 GSM2304A lookup
 GSM2304A substitution
 GSM2304A replacement

 

 
Back to Top

 


 
.