GSM3400A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM3400A
Código: 00*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 2.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 3 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 70 pF
Resistencia entre drenaje y fuente RDS(on): 0.054 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET GSM3400A
GSM3400A Datasheet (PDF)
gsm3400a.pdf
GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo
gsm3400as.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
gsm3400.pdf
GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des
gsm3400s.pdf
GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The
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