GSM3400A MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM3400A
Marking Code: 00*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: SOT-23
GSM3400A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM3400A Datasheet (PDF)
gsm3400a.pdf
GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo
gsm3400as.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
gsm3400.pdf
GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des
gsm3400s.pdf
GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
