GSM3481S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM3481S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.062 Ohm

Encapsulados: TSOT-23-6

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GSM3481S datasheet

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GSM3481S

GSM3481S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=90m @VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suit

 8.1. Size:939K  globaltech semi
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GSM3481S

GSM3484S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/18A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:907K  globaltech semi
 gsm3485.pdf pdf_icon

GSM3481S

GSM3485 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3485, P-Channel enhancement mode -30V/-12A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:872K  globaltech semi
 gsm3484.pdf pdf_icon

GSM3481S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

MOSTRAR MÁS

Otros transistores... GSM3454, GSM3456, GSM3456S, GSM3458, GSM3458BW, GSM3459, GSM3460, GSM3466, AO4407A, GSM3484, GSM3484S, GSM3485, GSM3497, GSM3679S, GSM3804, GSM3806W, GSM3814W