All MOSFET. GSM3481S Datasheet

 

GSM3481S Datasheet and Replacement


   Type Designator: GSM3481S
   Marking Code: 1S*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TSOT-23-6
 

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GSM3481S Datasheet (PDF)

 ..1. Size:880K  globaltech semi
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GSM3481S

GSM3481S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suit

 8.1. Size:939K  globaltech semi
 gsm3484s.pdf pdf_icon

GSM3481S

GSM3484S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/18A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:907K  globaltech semi
 gsm3485.pdf pdf_icon

GSM3481S

GSM3485 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3485, P-Channel enhancement mode -30V/-12A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:872K  globaltech semi
 gsm3484.pdf pdf_icon

GSM3481S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

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Datasheet: GSM3454 , GSM3456 , GSM3456S , GSM3458 , GSM3458BW , GSM3459 , GSM3460 , GSM3466 , AO3407 , GSM3484 , GSM3484S , GSM3485 , GSM3497 , GSM3679S , GSM3804 , GSM3806W , GSM3814W .

History: NDP4060L

Keywords - GSM3481S MOSFET datasheet

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