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GSM3484S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM3484S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: TO-252-2L
 

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GSM3484S Datasheet (PDF)

 ..1. Size:939K  globaltech semi
 gsm3484s.pdf pdf_icon

GSM3484S

GSM3484S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/18A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 7.1. Size:872K  globaltech semi
 gsm3484.pdf pdf_icon

GSM3484S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

 8.1. Size:907K  globaltech semi
 gsm3485.pdf pdf_icon

GSM3484S

GSM3485 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3485, P-Channel enhancement mode -30V/-12A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:880K  globaltech semi
 gsm3481s.pdf pdf_icon

GSM3484S

GSM3481S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suit

MOSTRAR MÁS

Otros transistores... GSM3456S , GSM3458 , GSM3458BW , GSM3459 , GSM3460 , GSM3466 , GSM3481S , GSM3484 , 5N50 , GSM3485 , GSM3497 , GSM3679S , GSM3804 , GSM3806W , GSM3814W , GSM3911W , GSM3981 .

History: R5205CND | 65N06A

 

 
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