GSM3484S Datasheet. Specs and Replacement

Type Designator: GSM3484S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-252-2L

GSM3484S substitution

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GSM3484S datasheet

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GSM3484S

GSM3484S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/18A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 7.1. Size:872K  globaltech semi
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GSM3484S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma... See More ⇒

 8.1. Size:907K  globaltech semi
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GSM3484S

GSM3485 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3485, P-Channel enhancement mode -30V/-12A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒

 8.2. Size:880K  globaltech semi
 gsm3481s.pdf pdf_icon

GSM3484S

GSM3481S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=90m @VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suit... See More ⇒

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Detailed specifications: GSM3456S, GSM3458, GSM3458BW, GSM3459, GSM3460, GSM3466, GSM3481S, GSM3484, IRFP064N, GSM3485, GSM3497, GSM3679S, GSM3804, GSM3806W, GSM3814W, GSM3911W, GSM3981

Keywords - GSM3484S MOSFET specs

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