GSM3981 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM3981
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36 nS
Cossⓘ - Capacitancia de salida: 223 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de MOSFET GSM3981
GSM3981 Datasheet (PDF)
gsm3981.pdf
20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=135m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m@VGS=-1.8V These devices are particularly suited for low Super high density cell
gsm3993.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3993, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt
gsm3911w.pdf
GSM3911W GSM3911W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3911W, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=68m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.0A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f
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