GSM3981 Datasheet and Replacement. Cross Reference Search

GSM3981 Datasheet (PDF)

..1. Size:417K globaltech semi
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=135m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m@VGS=-1.8V These devices are particularly suited for low Super high density cell

9.1. Size:467K globaltech semi
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30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3993, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

9.2. Size:1307K globaltech semi
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GSM3911W GSM3911W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3911W, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=68m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.0A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

Datasheet: GSM3484S , GSM3485 , GSM3497 , GSM3679S , GSM3804 , GSM3806W , GSM3814W , GSM3911W , IRF540 , GSM3993 , GSM4048WS , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , GSM4172S , GSM4172WS .