GSM4172S Todos los transistores

 

GSM4172S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4172S

Código: 4172S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 10 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: SOP-8P

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GSM4172S Datasheet (PDF)

1.1. gsm4172s.pdf Size:888K _update-mosfet

GSM4172S
GSM4172S

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode  30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low 

3.1. gsm4172ws.pdf Size:865K _update-mosfet

GSM4172S
GSM4172S

GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode  30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 5.1. gsm4124ws.pdf Size:1293K _update-mosfet

GSM4172S
GSM4172S

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8mΩ@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

5.2. gsm4102w.pdf Size:748K _update-mosfet

GSM4172S
GSM4172S

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode  100V/3.8A,RDS(ON)=158mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  100V/3.0A,RDS(ON)=175mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 5.3. gsm4134.pdf Size:843K _update-mosfet

GSM4172S
GSM4172S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design

5.4. gsm4134w.pdf Size:845K _update-mosfet

GSM4172S
GSM4172S

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac

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