GSM4172S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM4172S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: SOP-8P
Búsqueda de reemplazo de MOSFET GSM4172S
Principales características: GSM4172S
gsm4172s.pdf
GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4124ws.pdf
GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m @VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul
gsm4102w.pdf
GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
Otros transistores... GSM3911W , GSM3981 , GSM3993 , GSM4048WS , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , IRLZ44N , GSM4172WS , GSM4210 , GSM4210W , GSM4214 , GSM4214W , GSM4228 , GSM4248W , GSM4401S .
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